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Advance Product Information
Ku Band Power Amplifier TGA1045-EPU
Key Features and Performance
* * * * * HFET Technology 12.5 -15.5 GHz Frequency Range > 3W Nominal Pout 24 dB Nominal Gain 9V @ 1.2A Bias
Primary Applications
* * * Ku band Satellite Ground Terminal VSAT Point-to-Point Radio
Release Status
* Engineering Prototype Unit (EPU) samples available August 1998
Parame te r FREQUENCY RANGE LINEAR GAIN AT 25C GAIN FLATNESS P1dB AT 25C INP UT RETURN LOSS OUTP UT RETURN LOSS DC VOLTAGE CURRENT DC P OWER
Me as ure d (In Fixture ) 13.0 - 15.5 24.0 < 2.0 ~34.5 > 10 >8 +9 1.2 S ma ll Signa l 10.8
Units GHz dB dB pp dBm dB dB Volts A W
Chip Dimensions 4.69 mm x 3.35 mm
EG 1045 Fixtured Data 1 dB Compression Point
40
35
30
Pout (dBm)
25
Average
20
15
10 10 11 12 13 14 15 16 17 18 19 Frequency (GHz)
Preliminary Pout Data Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1
Advance Product Information
Vd 12 Vd 34
Vg 12
Vg 34
Recommended Assembly Diagram
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com

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